Söll, AljoschaLopriore, EdoardoOttesen, Asmund KjellegaardLuxa, JanPasquale, GabrieleSturala, JiriHájek, FrantišekJarý, VítězslavSedmidubský, DavidMosina, KseniiaSokolović, IgorRasouli, SaeedGrasser, TiborDiebold, UlrikeKis, AndrasSofer, Zdeněk2024-04-172024-04-172024-04-172024-04-0110.1021/acsnano.3c10411https://infoscience.epfl.ch/handle/20.500.14299/207154WOS:001195019600001van der Waals heterostructures of two-dimensional materials have unveiled frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap, high-kappa layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare-earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of 9 and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-kappa dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-kappa van der Waals dielectric environments.DielectricHigh-KTwo-Dimensional MaterialsCrystal SynthesisField-Effect TransistorsHeterostructuresExcitonstext::journal::journal article::research article