Pushkarev, S. S.Galiev, G. B.Klimov, E. A.Lavrukhin, D. V.Vasil'evskii, I. S.Imamov, R. M.Subbotin, I. A.Zhigalina, O. M.Zhigalina, V. G.Buffat, P. A.Dwir, B.Suvorova, E. I.2019-07-042019-07-042019-07-04201210.1117/12.2017272https://infoscience.epfl.ch/handle/20.500.14299/158836Metamorphic InxAl1-xAs buffer design influence on electrophysical and structural properties of the MHEMT nanoheterostructures was investigated. Electrophysical properties of the nanoheterostructures were characterized by Hall measurements, while the strucInfluence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAstext::conference output::conference proceedings::conference paper