De Fazio, DomenicoGoykhman, IlyaYoon, DuheeBruna, MatteoEiden, AnnaMilana, SilviaSassi, UgoBarbone, MatteoDumcenco, DumitruMarinov, KolyoKis, AndrasFerrari, Andrea C.2016-09-222016-09-222016-09-22201610.1021/acsnano.6b05109https://infoscience.epfl.ch/handle/20.500.14299/129504WOS:000384399300016We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 x 10(5). The photocurrent is in the 0.1-100 mu A range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.MoS22D materials2D semiconductorsoptoelectronicsHigh Responsivity, Large-Area Graphene/MoS2 flexible photodetectorstext::journal::journal article::research article