Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model

Guitton, G.Mangla, A.Chalkiadaki, M.-A.Fadhuile, F.Taris, T.Enz, C.2015-07-072015-07-072015-07-07201610.1002/cta.2082https://infoscience.epfl.ch/handle/20.500.14299/115905WOS:000368999300007This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient (IC). This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of merit. For given amplitude of oscillation and frequency, we are able to determine all the design variables in order to get the best trade-off between current consumption and phase noise. This methodology is demonstrated through the design of Pierce and cross-coupled oscillators and has been verified with BSIM6 metal oxide semiconductor field effect transistor compact model using the parameters of a commercial advanced 40 nm complementary metal oxide semiconductor process.design methodologyLC oscillatorsphase noiseBSIM6inversion coefficientDesign of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 modeltext::journal::journal article::research article