Gorczyca, I.Kaminska, A.Staszczak, G.Czernecki, R.Lepkowski, S. P.Suski, T.Schenk, H. P. D.Glauser, M.Butte, R.Carlin, J. F.Feltin, E.Grandjean, N.Christensen, N. E.Svane, A.2010-10-052010-10-052010-10-05201010.1103/PhysRevB.81.235206https://infoscience.epfl.ch/handle/20.500.14299/55081WOS:000278555500006The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit very large bowing with x, and calculations with simulation of clustered distributions of the In atoms over the cation sites show a strong enhancement of this effect. This relates well to the experimental data obtained from pressure dependent photoluminescence measurements for InxGa1-xN and InxAl1-xN layers, performed in this work, and combined with existing data for InxGa1-xN layers. We discuss possible explanations of the anomalously large magnitude of the dE(g)/dp bowing in these nitride alloys.INGANLOCALIZATIONDIODEStext::journal::journal article::research article