Chani, M. Tariq SaeedMarwani, H. M.Danish, E. Y.Karimov, Kh. S.Hilal, M.Hagfeldt, A.Asiri, A. M.2017-11-082017-11-082017-11-082017https://infoscience.epfl.ch/handle/20.500.14299/142089WOS:000411913200010Organic-inorganic hybrid tandem heterojunction ITO/AIPc:H2Pc/n-Si/Al photoelectric cell was fabricated by a pressing technology using preliminary vapor deposited bulk heterojunction films of mixed aluminum-phthalocyanine (AIPc) and metal free phthalocyanine (H2Pc) on the n-Si substrate and ITO coated plastic substrate. By keeping face to face the heterojunction films, the substrates (silicon and ITO coated plastic substrates) were pressed and fixed by adhesive at elevated temperature conditions. Total thickness of the AlPc and H2Pc films were equal to 340 nm. On the back side of n-Si substrate the Al film was deposited. Device architecture was the following: ITO/AlPc:H2Pc/n-Si/Al. The morphology of the organic semiconductors film was investigated by AFM. The optical properties of the AIPc-H2Pc film were studied by UV visible spectroscopy. Current Voltage characteristics were measured at dark condition and under illumination as well. Under illumination of 290 W/m(2) the values of V-oc, I-sc, FF and efficiency were equal to 0.32 V, 0.9 mA/cm(2), 0.37 and 0.22 %, respectively.Bulk heterojunction photoelectric cellThin film depositionOrganic-inorganicPressing TechnologyDevice fabricationAIPc-n-Sitext::journal::journal article::research article