Lorusso, G. F.Capozzi, V.Staehli, J. L.Flesia, C.Martin, D.Favia, P.Perna, G.2007-08-312007-08-312007-08-31199610.1088/0268-1242/11/3/007https://infoscience.epfl.ch/handle/20.500.14299/11203WOS:A1996TZ79700005Numerical and experimental results on the effect of randomness in GaAs/Al0.3Ga0.7As superlattices having a small number of randomly distributed well widths are reported. The numerical results indicate the splitting of the extended state miniband into sub-minibands of localized states having a disorder-induced fine structure. The comparison between the experimental results for low-temperature absorption spectra and the computed joint density of states of the investigated samples confirms the predicted features. The high-temperature photoluminescence intensity of random superlattices is observed to be enhanced with respect to the ordered case.LAYER THICKNESSESEXTENDED STATESQUANTUM-WELLSLOCALIZATIONALXGA1-XASEXCITONSSYSTEMSGAAStext::journal::journal article::research article