Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor

Padilla, JLMedina-Bailon, CAlper, CGamiz, FIonescu, AM2018-11-082018-11-082018-11-08201810.1063/1.5012948https://infoscience.epfl.ch/handle/20.500.14299/150023WOS:000431452900018Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistortext::journal::journal article::research article