Sacchetto, DavideSavu, VeronicaDe Micheli, GiovanniBrugger, JürgenLeblebici, Yusuf2012-09-192012-09-192012-09-19201110.1016/j.mee.2010.12.117https://infoscience.epfl.ch/handle/20.500.14299/85558We report on a fully CMOS compatible fabrication method for ambipolar silicon nanowire FinFETs. The low thermal budget processing, compatible with monolithic 3D device integration, makes use of low pressure chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning using stencil lithography, demonstrated for the first time. FinFETs with stenciled Al gates are successfully co-fabricated with polycrystalline silicon Ω-gated devices. Stencil lithography is envisaged as a key enabler for gate patterning on 3D structures, such as vertically stacked nanowire transistors.Schottky barrierambipolaritySi nanowirestencil lithographyFETsilicidetext::journal::journal article::research article