Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Zhang, ChunminJazaeri, FarzanBorghello, GiulioMattiazzo, SerenaBaschirotto, AndreaEnz, Christian2019-04-012019-04-012019-04-01201810.1109/CICTA.2018.8705713https://infoscience.epfl.ch/handle/20.500.14299/155868WOS:000469280200071Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.GigaRadMOSTSemiconductor device modelingInterface trapsMobility degradationOxide-trapped chargesShallow trench isolationTotal ionizing dose28-nm bulk MOSFETsY functionMobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Dosestext::conference output::conference proceedings::conference paper