Surrente, A.Gallo, P.Felici, M.Dwir, B.Rudra, A.Kapon, E.2009-11-132009-11-132009-11-13200910.1088/0957-4484/20/41/415205https://infoscience.epfl.ch/handle/20.500.14299/44236WOS:000269930100009Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 109 cm(-2)) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.Molecular-Beam EpitaxyHeterostructuresNanostructuresSuperlatticesRelaxationMechanismsThresholdEmissionCaptureEnergytext::journal::journal article::research article