Olle, Vojtech F.Wonfor, AdrianSulmoni, Luca A. M.Vasilev, Peter P.Lamy, Jean-MichelCarlin, Jean-FrancoisGrandjean, NicolasPenty, Richard V.White, Ian H.2013-10-012013-10-012013-10-01201310.1109/Lpt.2013.2267807https://infoscience.epfl.ch/handle/20.500.14299/95682WOS:000322232700004We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-mu m-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.Mode-locked lasersSemiconductor lasersVisible lasersUltrafast laserstext::journal::journal article::research article