Sidler, K.Cvetkovic, N. V.Tsamados, D.Ionescu, A. M.Brugger, J.Savu, V.2012-09-272012-09-27201210.1016/j.mee.2012.07.080https://infoscience.epfl.ch/handle/20.500.14299/85773WOS:000309497200112Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After one stretching cycle, their average mobility was decreased by 21%, remaining constant after the next 100 cycles. In order to decouple ageing from stretching effects for long-term cycling, transistors with 10 x 20 mu m(2) channels were stretched up to 28,000 times and measured in the relaxed state, in parallel with reference samples left on the wafer. Their mobility decreased by 25% after the first cycle, while the consequent stretching did not affect the mobility more than natural ageing. (C) 2012 Elsevier B.V. All rights reserved.Organic transistorsStencil lithographyFlexible substratesMobilityPentacenePolyimidetext::journal::journal article::research article