Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method

Cao, J.Ionescu, A. M.2012-03-262012-03-262012-03-262011https://infoscience.epfl.ch/handle/20.500.14299/79020Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Methodtext::conference output::conference paper not in proceedings