Robadey, J.Martin, D.Glick, M.Silva, P. C.Jouneau, P. H.Marti, U.Reinhart, F. K.2007-08-312007-08-312007-08-31199710.1049/el:19970214https://infoscience.epfl.ch/handle/20.500.14299/11247WOS:A1997WT99700031Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as low as 250A/cm(2) and typical sidemode suppression ratios of 40dB.distributed feedback lasersgallium indium arsenidemolecular beamepitaxial growthGAASGain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxytext::journal::journal article::research article