Casadei, AlbertoSchwender, JilRusso-Averchi, EleonoraRueffer, DanielHeiss, MartinAlarco-Llado, EstherJabeen, FauziaRamezani, MohammadNielsch, KorneliusFontcuberta I. Morral, Anna2014-01-092014-01-092014-01-09201310.1002/pssr.201307162https://infoscience.epfl.ch/handle/20.500.14299/99358WOS:000328484500023The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm(2)/Vs for doping concentrations lower than 3 x 10(18) cm(-3). Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)nanowiresdopingsurface passivationIII-V semiconductorsGaAscarrier mobilitytext::journal::journal article::research article