Fritschi, R.Dehollain, C.Declercq, M.Ionescu, A. M.Hibert, C.Flückiger, Ph.Renaud, Philippe2005-10-212005-10-21200210.1109/IECON.2002.1182883https://infoscience.epfl.ch/handle/20.500.14299/218176WOS:000181518100534A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproducibility compared with any other wet etching techniques. The platform is used to validate new MEMS architectures and concepts, such as the suspended-gate MOSFET that can serve as both RF capacitive switches and tuneable RF capacitors.AlAlSiCuRF MEMS switchesRF MEMS technological platformRF capacitive switchesRF passive componentsSOISiactive movable layeramorphous siliconhigh-Q suspended inductorsmembranesmulti-air-gapspolycrystalline siliconsacrificial layerssubstratessuspended beamssuspended-gate MOSFETtuneable RF capacitorstuneable capacitorsSF6XeF2MOSFETaluminiumaluminium alloysamorphous semiconductorscapacitorscopperelemental semiconductorsfield effect transistor switchesinductorsmicroswitchessiliconsilicon alloyssubstratestext::conference output::conference proceedings::conference paper