El Ghouli, SalimGrabinski, WladyslawSallese, Jean MichelJuge, AndreLallement, Christophe2019-08-252019-08-252019-08-252018-01-0110.23919/MIXDES.2018.8436730https://infoscience.epfl.ch/handle/20.500.14299/160630WOS:000480458200008The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and inaccurate concepts. Moreover, the pessimistic rules of thumb proposed for older bulk technologies are no more useful and lead to overdesign. This work takes advantage of the Moderate Inversion and uses low and high frequency figures of merit to provide a convenient sizing method for a 35 GHz Low Noise Amplifier (LNA) in 28 nm UTBB FDSOI technology.Engineering, Electrical & ElectronicEngineeringtransconductance efficiencygm over iddouble-gate fetsfdsoiutbbanalogrflow-powerlow-voltagemm-wavelnadevicemosfettext::conference output::conference proceedings::conference paper