Richardson, JustinGrant, LindsayGersbach, MarekCharbon, EdoardoNiclass, ChristianoHenderson, RobertNiclass, Cristiano2017-06-132017-06-132017-06-132010https://infoscience.epfl.ch/handle/20.500.14299/138314A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.patentUS7898001US201013363642221995