Long, GenHenck, HugoGibertini, MarcoDumcenco, DumitruWang, ZheTaniguchi, TakashiWatanabe, KenjiGiannini, EnricoMorpurgo, Alberto F.2020-05-022020-05-022020-05-022020-04-0810.1021/acs.nanolett.9b05165https://infoscience.epfl.ch/handle/20.500.14299/168525WOS:000526413400029The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI3 and CrCI3 can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field (H) and temperature (T). This is possible because the spins within each individual layer are ferromagnet cally aligned and the tunneling magnetoresistance depends on the relative orientation of the magnetization in adjacent layers. The situation is different for systems that are antiferromagnetic within the layers in which case it is unclear whether magnetoresistance measurements can provide information about the magnetic state. Here, we address this issue by investigating tunnel transport through atomically thin crystals of MnPS3, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below T similar to 78 K, a T-dependent magnetoresistance sets in at mu H-0 similar to 5 T and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk measurements. We show that the magnetoresistance persists as thickness is reduced with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on H, indicating the persistence of magnetism in the ultimate limit of individual monolayers.Chemistry, MultidisciplinaryChemistry, PhysicalNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysicsmnps32d magnetismspin floptunneling transportphase-transitionscritical-behavior2d materialsantiferromagnetsferromagnetismanisotropydynamicstext::journal::journal article::research article