Mereuta, AlexandruIakovlev, VladimirCaliman, AndreiSyrbu, AlexeiRudra, AlokKapon, Eli2010-11-302010-11-302010-11-30200810.1109/ICIPRM.2008.4702974https://infoscience.epfl.ch/handle/20.500.14299/60612WOS:000267695700083We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.Vertical surface emitting laserstunable laserswafer bondinggas sensingQuantum-Well LasersMu-MPowertext::conference output::conference proceedings::conference paper