Mereuta, AlexandruNechay, KostiantynCaliman, AndreiSuruceanu, GrigoreRudra, AlokGallo, PascalGuina, MirceaKapon, Eli2019-07-172019-07-172019-07-172019-11-0110.1109/JSTQE.2019.2922819https://infoscience.epfl.ch/handle/20.500.14299/159171WOS:000474565300001Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors fixed on a diamond heat-sink substrate in a flip-chip geometry, incorporated in a V-cavity configuration. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11 degrees C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. This demonstration represents more than five-fold increase of the output power compared to the state-of-the-art flip-chip VECSELs previously reported at the 1.55 mu m wavelength range. It opens new perspectives for developing practical VECSEL-based laser systems operating at a wavelength range widely used in many applications.Engineering, Electrical & ElectronicQuantum Science & TechnologyOpticsPhysics, AppliedEngineeringPhysicslasersdiode pumpedoptical pumpingsemiconductor lasersvertical emitting laserssemiconductor disk laserhigh-poweroutput poweroperationtext::journal::journal article::research article