Zhang, ChunminJazaeri, FarzanBorghello, GiulioMattiazzo, SerenaBaschirotto, AndreaEnz, Christian2019-04-012019-04-012019-04-01201810.1109/NSSMIC.2018.8824379https://infoscience.epfl.ch/handle/20.500.14299/155859This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems.GigaRadMOSTSemiconductor device modelingBias conditionInterface trapsNarrow-channel effect1 GradOxide trapsShort-channel effectTotal ionizing dose28-nm bulk MOSFETstext::conference output::conference proceedings::conference paper