Dorsaz, J.Zellweger, C.Gradecak, S.Ilegems, M.Carlin, J. F.2010-10-132010-10-132010-10-13200410.1109/ISCSPC.2003.1354428https://infoscience.epfl.ch/handle/20.500.14299/55448High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitting diodes with active layers grown on top of AlInN/GaN multi-layers exhibit internal quantum efficiencies comparable to those of reference diodes grown directly on GaN buffer, this further demonstrate that AlInN material quality can meet the needs of optoelectronic application.Molecular-Beam EpitaxyDistributed Bragg ReflectorsChemical-Vapor-DepositionFilmsMirrorsAlgainntext::conference output::conference proceedings::conference paper