Jazaeri, FarzanSallese, Jean-Michel2015-09-282015-09-282015-09-28201510.1109/Ted.2015.2437954https://infoscience.epfl.ch/handle/20.500.14299/118855WOS:000358507600034This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.Double gate (DG) MOSFETinduced gate noise (IGN)junctionless (JL)thermal noisetext::journal::journal article::research article