Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve

Fesenko, PavloFlauraud, ValentinXie, ShenqiKang, EnpuUemura, TakafumiBrugger, JürgenGenoe, JanHeremans, PaulRolin, Cédric2017-07-072017-07-07201710.1021/acsami.7b06584https://infoscience.epfl.ch/handle/20.500.14299/138833WOS:000406172700005To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.organic semiconductorsC-10-DNTTstencil evaporationdiffusionorganic thin-film transistorsGrowth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosievetext::journal::journal article::research article