Maier, DavidAlomari, MohammedGrandjean, NicolasCarlin, Jean-Francoisdi Forte-Poisson, Marie-AntoinetteDua, ChristianChuvilin, AndreyTroadec, DavidGaquiere, ChristopheKaiser, UteDelage, Sylvain L.Kohn, Erhard2011-12-162011-12-162011-12-16201010.1109/TDMR.2010.2072507https://infoscience.epfl.ch/handle/20.500.14299/74812WOS:000286680000003The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.GaN heterostructureshigh-temperature electronicsInAlN/GaN high-electron mobility transistor (HEMT)reliabilityElectron-Mobility TransistorsN-Type GanAlgan/Gan HfetsReliabilityHeterostructuresDegradationPerformanceStabilityOxidationContactstext::journal::journal article::research article