Buffolo, MatteoRoccato, NicolaPiva, FrancescoDe Santi, CarloBrescancin, RiccardoCasu, ClaudiaCaria, AlessandroMukherjee, KalparupaHaller, CamilleCarlin, Jean FrancoisGrandjean, NicolasVallone, MarcoTibaldi, AlbertoBertazzi, FrancescoGoano, MicheleVerzellesi, GiovanniMosca, MauroMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo2022-08-152022-08-152022-08-152022-01-0110.1117/12.2606599https://infoscience.epfl.ch/handle/20.500.14299/190078WOS:000836332700014III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.Engineering, ManufacturingEngineering, Electrical & ElectronicMaterials Science, MultidisciplinaryOpticsEngineeringMaterials Sciencegallium nitridedefectsindiumreliabilitytrap-assisted tunnelingtext::conference output::conference proceedings::conference paper