Jazaeri, FarzanShalchian, MajidSallese, Jean-Michel2020-03-032020-03-032020-03-032020-02-0110.1109/TED.2019.2958180https://infoscience.epfl.ch/handle/20.500.14299/166698WOS:000510723400055In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the concept of normalized current and are validated with the technology computer-aided design simulations. This represents an essential step toward the ac analysis of the circuits based on the HEMT devices.Engineering, Electrical & ElectronicPhysics, AppliedEngineeringPhysics2-d electron gasacgaasganhemtphysics-based modelingquantum wellrftranscapacitancestext::journal::journal article::research article