Photocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating coupler

SöDerströM, KarinHaug, Franz-JosefEscarré, JordiCubero, OscarBallif, Christophe2010-05-272010-05-27201010.1063/1.3435481https://infoscience.epfl.ch/handle/20.500.14299/50476WOS:000278183200084Angle resolved measurements of the external quantum efficiency of n-i-p single junction amorphous solar cell deposited on a grating structure show clearly defined peaks of enhanced photocurrent in the weakly absorbing region between 1.6 and 2.15 eV. We explain these absorption phenomena and their angular variation with the excitation of guided modes via grating coupling. Calculation using an equivalent flat multilayer system permits to relate the theoretical values with the experimental data.amorphous semiconductorsdiffraction gratingselemental semiconductorsphotoconductivitysemiconductor junctionssemiconductor thin filmssiliconsolar cellsthin film devicesAbsorption EnhancementOptical-AbsorptionLight-ScatteringArraysPhotocurrent increase in n-i-p thin film silicon solar cells by guided mode excitation via grating couplertext::journal::journal article::research article