Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate

Wang, DanghuiSimoen, EddyClaeys, CorGovoreanu, BogdanKubicek, StefanJussot, JulienChan, B.T.Dumoulin-Stuyck, NardRadu, IulianaMocuta, Dan2019-08-212019-08-212019-08-21201910.5075/epfl-ICLAB-ICNF-269189https://infoscience.epfl.ch/handle/20.500.14299/160035Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gatetext::conference output::conference paper not in proceedings