David, AurelienMoran, BrendanMcgroddy, KellyMatioli, ElisonHu, Evelyn L.Denbaars, Steven P.Nakamura, ShujiWeisbuchb, Claude2016-03-172016-03-172016-03-17200810.1063/1.2898513https://infoscience.epfl.ch/handle/20.500.14299/125025We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed. (c) 2008 American Institute of Physics.text::journal::journal article::research article