C- and L-band tunable integrated Erbium lasers via scalable manufacturing

Ji, XinruLiu, YangYang, XuanQiu, ZheruKim, TaegonBianconi, SimoneOlson, Joseph C.Likhachev, GrigoriiVoloshin, AndreyKippenberg, Tobias J.2025-07-052025-07-052025-07-04202510.1364/OFC.2025.M3J.42-s2.0-105009300542https://infoscience.epfl.ch/handle/20.500.14299/251929We demonstrate an integrated Erbium-based tunable laser using wafer-scale fabrication and ion implantation of silicon nitride photonic integrated circuits. We achieve single-frequency lasing tunable from 1530 nm to 1621 nm covering nearly the entire optical C- and L-band.enfalseC- and L-band tunable integrated Erbium lasers via scalable manufacturingtext::conference output::conference proceedings::conference paper