Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantation

Dumas, C.Grisolia, J.BenAssayag, G.Bonafos, C.Schamm, S.Arbouet, A.Paillard, V.Van den Boogaart, M.A.F.Brugger, J.Normand, P.2009-01-262009-01-262008https://infoscience.epfl.ch/handle/20.500.14299/34397We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask containing. After thermal annealing the implanted regions perfectly mimic the mask geometry. Energy-filtered transmission electron microscopy images and PL measurement reveal that smaller nanocrystals are formed near the edges of the implanted areas due to a dose edge effect.Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantationtext::conference output::conference presentation