Radisavljevic, BranimirWhitwick, Michael B.Kis, Andras2012-07-242012-07-242012-07-24201210.1063/1.4738986https://infoscience.epfl.ch/handle/20.500.14299/84154WOS:000306944700080In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738986]MoS2two-dimensional electronicstransition-metal dichalcogenidestext::journal::journal article::research article