Rassekh, AminJazaeri, FarzanSallese, Jean-Michel2022-01-012022-01-012022-01-01202210.1109/TED.2021.3133193https://infoscience.epfl.ch/handle/20.500.14299/184112WOS:000734080800001This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior. The impact of the technological parameters is investigated in order to ensure the hysteresis-free operation. Finally, the stability of NCDG JLFET is predicted over a wide range of temperatures from 77 to 400 K. This approach has been assessed with numerical TCAD simulations.Engineering, Electrical & ElectronicPhysics, AppliedEngineeringPhysicslogic gatesmathematical modelsfield effect transistorsvoltageferroelectric materialshysteresisnumerical modelscharge-based modeldouble-gate junctionless field-effect transistor (dg jlfet)hysteresis freeinstabilitynegative capacitance (nc)text::journal::journal article::research article