Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Harik, L.Kayal, M.Sallese, Jean-Michel2010-10-212010-10-212010-10-21200810.1109/SOI.2008.4656309https://infoscience.epfl.ch/handle/20.500.14299/55910WOS:000262065700038In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. ©2008 IEEE.MOSFETdelta-sigma modulationoptical sensorsphototransistorssilicon-on-insulatorOptical sensor using a floating body SOI MOSFET in the Delta-sigma looptext::conference output::conference proceedings::conference paper