Sulmoni, L.Lamy, J.-M.Dorsaz, J.Castiglia, A.Carlin, J.-F.Scheibenzuber, W. G.Schwarz, U. T.Zeng, X.Boiko, D. L.Grandjean, N.2013-03-282013-03-282013-03-28201210.1063/1.4768163https://infoscience.epfl.ch/handle/20.500.14299/91195WOS:000311969800013We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768163]text::journal::journal article::research article