Schneider, Daniel S.Lucchesi, LeonardoReato, ErosWang, ZhenyuPiacentini, AgataBolten, JensMarian, DamianoMarin, Enrique G.Radenovic, AleksandraWang, ZhenxingFiori, GianlucaKis, AndrasIannaccone, GiuseppeNeumaier, DanielLemme, Max C.2024-06-052024-06-052024-06-052024-05-1010.1038/s41699-024-00471-yhttps://infoscience.epfl.ch/handle/20.500.14299/208302WOS:001217990800001Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits 1 . Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the transistors for real-world applications. Graphene-based heterostructures can be used in addition to, or as a substitute for unsuitable metals. In this paper, we present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene achieving a low contact resistances of about 9 k Omega<middle dot>mu m and high on/off current ratios of 108. Furthermore, we also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a substantial performance enhancement by means of layer optimizations that would make transistors promising for use in future logic integrated circuits.TechnologyPhysical SciencesMonolayer Mos2ResistanceGrowthPerformanceDensityLimitWs2text::journal::journal article::research article