Mi, J.Letourneau, P.Ganiere, J. D.Gailhanou, M.Dutoit, M.Dubois, C.Dupuy, J. C.Bremond, G.2007-08-312007-08-312007-08-311994https://infoscience.epfl.ch/handle/20.500.14299/11109WOS:A1994NN69300014Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.GROWTHtext::journal::journal article::research article