Cricenti, A.Marocchi, V.Generosi, R.Luce, M.Perfetti, P.Vobornik, D.Margaritondo, G.Talley, D.Thielen, P.Sanghera, J. S.Aggarwal, I. D.Miller, J. K.Tolk, N. H.Piston, D. W.2006-10-032006-10-032006-10-03200410.1016/S0925-8388(03)00557-7https://infoscience.epfl.ch/handle/20.500.14299/234214WOS:0001875572000054691The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit. (C) 2003 Elsevier B.V. All rights reserved.nanostructuresscanning near-field optical microscopyinternalphotoemissionreflectivityPHOTOEMISSIONSEMICONDUCTORPHOTOEMISSIONtext::journal::journal article::research article