Garetto, D.Randriamihaja, Y. M.Zaka, A.Rideau, D.Schmid, A.Jaouen, H.Leblebici, Y.2011-11-012011-11-012011-11-01201110.1109/ULIS.2011.5757973https://infoscience.epfl.ch/handle/20.500.14299/72145A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements. © 2011 IEEE.trap cross-sectionmultiphonon trapping modelAC analysistext::conference output::conference proceedings::conference paper