Alper, CemVisciarelli, MichelePalestri, PierpaoloPadilla, Jose L.Gnudi, AntonioGnani, ElenaIonescu, Adrian M.2016-03-012016-03-012016-03-01201510.1109/SISPAD.2015.7292312https://infoscience.epfl.ch/handle/20.500.14299/124474In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics. © 2015 IEEE.text::conference output::conference proceedings::conference paper