Zhang, RongMarrazzo, AntimoVerstraete, Matthieu JeanMarzari, NicolaSohier, Thibault Daniel Pierre2021-10-092021-10-092021-10-092021-09-2210.1021/acs.nanolett.1c02322https://infoscience.epfl.ch/handle/20.500.14299/181999WOS:000700883900028A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to k(R) = 0.08 angstrom(-1)), leading to a pi/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.Chemistry, MultidisciplinaryChemistry, PhysicalNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysics2d materialsspintronicsfield-effectspin-layer lockingdensity-functional theorytext::journal::journal article::research article