Lany, MarcPopovic, Radivoje S.2011-12-162011-12-162011-12-16200910.1109/BIPOL.2009.5314129https://infoscience.epfl.ch/handle/20.500.14299/74573WOS:000289188800028Single-electron bipolar avalanche transistors (SEBATs) enable current sensing by electron counting at room temperature. Here, differential SEBAT circuits combining the functions of amplification and analog-to-digital (A/D) conversion are proposed and characterized for two applications: Low-current AID conversion and differential voltage A/D conversion. Charge detection efficiencies in the order of 30% are reached, allowing for the direct A/D conversion of currents in the 10(-13) A range. An equivalent of the differential pair is used as a differential voltage ADC.Analog-digital conversionAvalanche breakdownBipolar transistorstext::conference output::conference proceedings::conference paper