Ren, L.Duran, H.C.Beck, M.Py, M.A.Ilegems, Marc2015-08-312015-08-312015-08-311997https://infoscience.epfl.ch/handle/20.500.14299/117477Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched devices. All the traps as detected by LFN were found to be located in the InAlAs barrier layer.text::conference output::conference proceedings::conference paper