Wang, JunHoudre, Romuald2024-02-212024-02-212024-02-212024-02-0110.1088/1361-6641/ad1b17https://infoscience.epfl.ch/handle/20.500.14299/205125WOS:001146979300001Suspended epitaxial gallium nitride (GaN) on silicon (Si) photonic crystal devices suffer from large residual tensile strain, especially for long waveguides, because fine structures tend to crack due to large stress. By introducing spring-like tethers, designed by the combination of a spring network model and finite element method simulations, the stress at critical locations was mitigated and the cracking issue was solved. Meanwhile, the tethered-beam structure was found to be potentially a powerful method for high-precision strain measurement in tensile thin films, and in this case, a strain of 2.27(+/- 0.01)x10-3 was measured in 350 nm epitaxial GaN-on-Si.TechnologyPhysical SciencesGan On SiPhotonic Crystal DevicesStrain EngineeringStrain MeasurementTensile Thin Films.text::journal::journal article::research article