Ionescu, Adrian M.2012-03-152012-03-152012-03-15201210.1038/nnano.2012.10https://infoscience.epfl.ch/handle/20.500.14299/78795WOS:000300398900004Tunnel-JunctionsElectroresistanceMemoriesNanoelectronics: Ferroelectric devices show potentialtext::journal::journal article::research article