Plasma deposition of p-i-n devices in a single-chamber larger area PECVC reactor: Reduction of the Boron cross-contamination

Ballutaud, J.Bucher, C.Hollenstein, Ch.Howling, A.A.Kroll, U.Benagli, S.Shah, A.Buechel, A.2008-04-182008-04-182008-04-182003https://infoscience.epfl.ch/handle/20.500.14299/23303LRP 776Plasma deposition of p-i-n devices in a single-chamber larger area PECVC reactor: Reduction of the Boron cross-contaminationtext::report