Sacchetto, DavideZervas, MichailTemiz, YukselDe Micheli, GiovanniLeblebici, Yusuf2011-07-152011-07-152011-07-15201210.1109/TNANO.2011.2160557https://infoscience.epfl.ch/handle/20.500.14299/69607WOS:000298998400002In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.ReRAMTSVTiO2memristormemristive systems3D-integrationtext::journal::journal article::research article